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PDF ESM412008 Data sheet ( Hoja de datos )
| Número de pieza | ESM412008 | |
| Descripción | Recovery Diode | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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Replaces March 1998 version, DS4141-3.4
APPLICATIONS
s Induction Heating
s A.C. Motor Drives
s Inverters And Choppers
s Welding
s High Frequency Rectification
s UPS
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
ESM4120 10
ESM4120 08
ESM4120 06
Repetitive Peak
Reverse Voltage
V
RRM
V
1000
800
600
Conditions
V = V + 100V
RSM
RRM
ESM4120
ESM4120
Fast Recovery Diode
Advance Information
DS4141-4.0 January 2000
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
trr
1000V
334A
4000A
15µC
0.8µs
CURRENT RATINGS
Symbol
Parameter
Double Side Cooled
IF(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Outline type code: M771.
See Package Details for further information.
Conditions
Max. Units
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
T = 65oC
case
Half wave resistive load, T = 65oC
case
Tcase = 65oC
T = 65oC
case
334 A
565 A
490 A
210 A
360 A
290 A
1/8
1 page  
1000
100
10
∫IF
50µs
QS = 0
QS
Conditions:
Tj = 125 ˚C,
VR = 100V
tp = 1ms
dIR/dt
IRR
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
ESM4120
1
1
1000
10 100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.3 Recovered charge
1000
Conditions:
Tj = 125˚C,
VR = 100V
100
IF = 1000A
10
1
1 10 100 1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.4 Typical reverse recovery current vs rate of rise of forward current
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ESM412008.PDF ] | |
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