ATF-13736 Datasheet PDF - Agilent(Hewlett-Packard)
| Part Number | ATF-13736 | |
| Description | 2-16 GHz Low Noise Gallium Arsenide FET | |
| Manufacturers | Agilent(Hewlett-Packard) | |
| Logo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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There is a preview and ATF-13736 download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
• Low Noise Figure:
1.8␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
36 micro-X Package
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
dB
dB
dB
dB
dB
dB
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
Transconductance: VDS = 2.5 V, VGS = 0 V
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
f=12.0GHz dBm
f = 12.0 GHz dB
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Min.
8.0
25
40
-4.0
Typ.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
8.5
55
50
-1.5
Max.
2.2
90
-0.5
5-39
5965-8722E
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ATF-13736 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ATF-13736.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| ATF-13736 | The function is 2-16 GHz Low Noise Gallium Arsenide FET. Agilent(Hewlett-Packard) | |
| ATF-13736-STR | The function is 2-16 GHz Low Noise Gallium Arsenide FET. Agilent(Hewlett-Packard) | |
| ATF-13736-TR1 | The function is 2-16 GHz Low Noise Gallium Arsenide FET. Agilent(Hewlett-Packard) | |
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