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M27128A-1F6 fiches techniques PDF

STMicroelectronics - NMOS 16K 2K x 8 UV EPROM

Numéro de référence M27128A-1F6
Description NMOS 16K 2K x 8 UV EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27128A-1F6 fiche technique
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION
525mW Max ACTIVE POWER, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTPUTS TTL COMPATIBLE
DURING BOTH READ and PROGRAM
MODES
THREE-STATE OUTPUT with TIED-OR-
CAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
24
1
FDIP24W (F)
Figure 1. Logic Diagram
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and elec-
trically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important require-
ments.
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Table 1. Signal Names
A0 - A10
Q0 - Q7
EP
G
VPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable / Program
Output Enable
Program Supply
Supply Voltage
Ground
VCC VPP
11
A0-A10
8
Q0-Q7
EP M2716
G
VSS
AI00784B
July 1994
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