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Numéro de référence | M27512-20F1 | ||
Description | NMOS 512K 64K x 8 UV EPROM | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Figure 1. Logic Diagram
VCC
16
A0-A15
Table 1. Signal Names
A0 - A15
Q0 - Q7
E
GVPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable / Program Supply
Supply Voltage
Ground
E
GVPP
M27512
VSS
8
Q0-Q7
AI00765B
March 1995
1/11
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Pages | Pages 11 | ||
Télécharger | [ M27512-20F1 ] |
No | Description détaillée | Fabricant |
M27512-20F1 | NMOS 512K 64K x 8 UV EPROM | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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