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PDF FP100 Data sheet ( Hoja de datos )
| Número de pieza | FP100 | |
| Descripción | HIGH PERFORMANCE PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
• FEATURES
♦ 14 dBm P-1dB at 12 GHz
♦ 9 dB Power Gain at 12 GHz
♦ 3.0 dB Noise Figure at 12 GHz
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm)
DIE THICKNESS: 3.9 mils (100 µm typ.)
BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz
range. The device is well-suited for telecommunication applications.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C
Parameter
Output Power @
1dB Compression
Power Gain @
1dB Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Symbol
P1dB
G1dB
MAG
NF
η
IDSS
GM
VP
|VBDGD|
|VBDGS|
|IGSL |
Test Conditions
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 15.5 dBm
VDS = 2 V; VGS = 0 V
VDS = 2 V; VGS = 0 V
VDS = 2 V; IDS = 1 mA
IGS = 1 mA
IGS = 1 mA
VGS = -5 V
Min
13
8
14.5
20
15
15
-0.50
8
7
Typ Max Units
14 dBm
9 dB
15.5 dB
3.0 dB
25 %
30
20
-2.5
10.5
mA
mS
V
V
10 V
4 10 µA
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Email: [email protected]
Revised: 07/18/01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FP100.PDF ] | |
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