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Numéro de référence | FQD30N06 | ||
Description | 60V N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FQD30N06 / FQU30N06
60V N-Channel MOSFET
January 2009
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• RoHS Compliant
DD
!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
"
!"
G!
"
"
!
S
FQD30N06 / FQU30N06
60
22.7
14.3
90.8
± 25
280
22.7
4.4
7.0
2.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Typ Max Units
-- 2.85 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A2. January 2009
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Pages | Pages 9 | ||
Télécharger | [ FQD30N06 ] |
No | Description détaillée | Fabricant |
FQD30N06 | 60V N-Channel MOSFET | Fairchild Semiconductor |
FQD30N06L | 60V LOGIC N-Channel MOSFET | Fairchild Semiconductor |
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