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Fairchild Semiconductor - N-Channel Logic Level MOSFETs 30V/ 30A/ 0.023ohm

Numéro de référence FQD60N03L
Description N-Channel Logic Level MOSFETs 30V/ 30A/ 0.023ohm
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQD60N03L fiche technique
April 2004
FQD60N03L
N-Channel Logic Level MOSFETs
30V, 30A, 0.023
General Description
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.014(Typ), V GS = 10V
• rDS(ON) = 0.024(Typ), V GS = 4.5V
• Qg (Typ) = 9.6nC, V GS = 5V
• Qgd (Typ) = 3.4nC
• CISS (Typ) = 900pF
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings TC=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
TJ, T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, V GS = 10V)
Continuous (TC = 100oC, V GS = 4.5V)
Continuous (TC = 25oC, V GS = 10V, R θJA= 52oC/W)
Pulsed
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
30
±20
30
19
7.9
Figure 4
45
0.37
-55 to 150
Thermal Characteristics
Rθ JC
Rθ JA
Rθ JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area
2.73
100
52
Package Marking and Ordering Information
Device Marking
FQD60N03L
Device
FQD60N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FQD60N03L Rev. B1

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