|
|
PDF FQP4N90 Data sheet ( Hoja de datos )
| Número de pieza | FQP4N90 | |
| Descripción | 900V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FQP4N90 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FQP4N90
900V N-Channel MOSFET
October 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
IRF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP4N90
900
4.2
2.65
16.8
± 30
570
4.2
14
4.0
140
1.12
-55 to +150
300
Typ Max
-- 0.89
0.5 --
-- 62.5
©2001 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. B, October 2001
1 page  
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
12V 200nF
300nF
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL VDS
VDD
( 0.5 rated VDS )
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
EAS
=
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
VDD
BVDSS
IAS
ID (t)
VDD
VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. B, October 2001
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQP4N90.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FQP4N90 | 900V N-Channel MOSFET | Fairchild Semiconductor |
| FQP4N90C | 900V N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |