|
|
Numéro de référence | B250-C1000 | ||
Description | SILICON BRIDGE RECTIFIERS | ||
Fabricant | EIC discrete Semiconductors | ||
Logo | |||
1 Page
B40-B380/C1000
PRV : 100 - 900 Volts
Io : 1.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45°C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms.)
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance + 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
B40-
C1000
100
40
100
B80-
C1000
200
80
200
B125-
C1000
300
125
300
B250-
C1000
600
250
600
B380-
C1000
900
380
900
UNIT
Volts
Volts
Volts
IF(AV)
1.2 Amps.
1.0
IFSM 40 Amps.
I2t 10 A2S
Rt 1.0 2.0 4.0 8.0 12.0 Ω
CL
5000
2500
1000
500
200
µF
VF 1.0 Volts
IR
RθJA
TJ
TSTG
10
36
- 50 to + 125
- 50 to + 125
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : AUGUST 26,1998
|
|||
Pages | Pages 2 | ||
Télécharger | [ B250-C1000 ] |
No | Description détaillée | Fabricant |
B250-C1000 | SILICON BRIDGE RECTIFIERS | EIC discrete Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |