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B250-C1500R fiches techniques PDF

EIC discrete Semiconductors - SILICON BRIDGE RECTIFIERS

Numéro de référence B250-C1500R
Description SILICON BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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B250-C1500R fiche technique
B40 - B380/C1500R
PRV : 100 - 900 Volts
Io : 1.5 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL B40- B80- B125- B250- B380-
C1500R C1500R C1500R C1500R C1500R
Maximum Recurrent Peak Reverse Voltage
VRRM 100 200 300 600 900
Maximum RMS Input Voltage R+C -Load
VRMS 40 80 125 250 380
Maximum DC Blocking Voltage
VDC 100 200 300 600 900
Maximum Average Forward Current For
Free Air Operation at Tc = 45 °C R+L -Load
I F(AV)
1.6
C -Load
1.5
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms. )
Maximum Series Resistor C-Load VRMS = ± 10%
I FSM
50
I2t 10
Rt 1.0 2.0 4.0 8.0 12.0
Maximum load Capacitance + 50%
-10%
CL
5000 2500 1000
500
200
Maximum Forward Voltage per Diode at IF = 1.5 Amps. VF
1.0
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
IR
RθJA
TJ
10
36
- 50 to + 125
Storage Temperature Range
TSTG
- 50 to + 150
UNIT
Volts
Volts
Volts
Amps.
Amps.
A2S
µF
Volts
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998

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