DataSheetWiki


B40C1000G fiches techniques PDF

General Semiconductor - GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

Numéro de référence B40C1000G
Description GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





1 Page

No Preview Available !





B40C1000G fiche technique
B40C1000G THRU B380C1000G
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 65 to 600 Volts Forward Current -1.0 Ampere
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0
(25.4)
MIN.
0.032 (0.81)
0.028 (0.71)
0.060 (1.52)
0.020 (0.51)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated chip junctions
High case dielectric strength
Typical IR less than 0.1 µ A
High overload surge current
Ideal for printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
B40
C1000G
B80
C1000G
B125
C1000G
B250
B380 UNITS
C1000G C1000G
Maximum repetitive peak reverse voltage
VRRM
65
125 200 400 600 Volts
Maximum RMS input voltage R + C-load
VRMS
40
80 125 250 380 Volts
Maximum DC blocking voltage
VDC 65 125 200 400 600 Volts
Maximum peak working voltage
VRWM
90
180 300 600 900 Volts
Maximum non-repetitive peak voltage
VRSM
100
200
350
600 1000 Volts
Maximum repetitive peak forward surge current
IFRM
10.0 Amps
Maximum average forward output current for
free air operation at TA=45°C R + L-Load
C-Load
I(AV)
1.2 Amps
1.0
Peak forward surge current single sine wave on
rated load (JEDEC Method)
IFSM
45.0 Amps
Rating for fusing at
TJ=125°C (t<8.3ms)
I2t
10.0
A2sec
Minimum series resistor C-load at VRMS = ±10%
RT 1.0 2.0 4.0 8.0 12.0 Ohms
Maximum load capacitance +50%
-10%
CL 5000 2500 1000 500 200 µF
Maximum instantaneous forward voltage drop per leg at 1.0A
VF
1.0 Volts
Maximum reverse current at rated repetitive
peak voltage per leg
TA=25°C
IR
10.0 µA
Typical thermal resistance (NOTE 1)
RΘJA
RΘJL
36.0
11.0 °C/W
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
TSTG
-40 to +150
°C
NOTE:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. at 0.375" (9.5mm) lead lengths with 0.2 x 0.2" (5.5 x 5.5mm) copper pads
4/98

PagesPages 2
Télécharger [ B40C1000G ]


Fiche technique recommandé

No Description détaillée Fabricant
B40C1000 1.0A BRIDGE RECTIFIER Won-Top Electronics
Won-Top Electronics
B40C1000 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
B40C1000 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
B40C1000 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche