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Hitachi Semiconductor - Silicon P-Channel Power MOS FET Array

Numéro de référence 4AJ11
Description Silicon P-Channel Power MOS FET Array
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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4AJ11 fiche technique
4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
RDS(on) 0.13 , VGS = –10 V, ID = –4 A
RDS(on) 0.17 , VGS = –4 V, I D = –4 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver and solenoid driver and lamp driver

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