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Numéro de référence | 4AJ11 | ||
Description | Silicon P-Channel Power MOS FET Array | ||
Fabricant | Hitachi Semiconductor | ||
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4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.13 , VGS = –10 V, ID = –4 A
RDS(on) 0.17 , VGS = –4 V, I D = –4 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
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Pages | Pages 6 | ||
Télécharger | [ 4AJ11 ] |
No | Description détaillée | Fabricant |
4AJ11 | Silicon P-Channel Power MOS FET Array | Hitachi Semiconductor |
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