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4X16E83V fiches techniques PDF

ETC - 4 MEG x 16 EDO DRAM

Numéro de référence 4X16E83V
Description 4 MEG x 16 EDO DRAM
Fabricant ETC 
Logo ETC 





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4X16E83V fiche technique
EDO DRAM
4 MEG x 16
EDO DRAM
4X16E43V
FEATURES
• Single +3.3V ±0.3V power supply
• Industry-standard x16 pinout, timing, functions,
and package
• 12 row, 10 column addresses (4)
13 row, 9 column addresses (8)
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH
distributed across 64ms
• Self refresh for low-power data retention
OPTIONS
• Plastic Package
50-pin TSOP (400 mil)
• Timing
50ns access
60ns access
• Refresh Rates
4K
8K
MARKING
TW
-5
-6
4
8
• Operating Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
None
IT
NOTE: 1. The “#” symbol indicates signal is active LOW.
PIN ASSIGNMENT (Top View)
50-Pin TSOP
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
VCC
WE#
RAS#
NC
NC
NC
NC
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50 VSS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 VSS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 NC
39 VSS
38 CASL#
37 CASH#
36 OE#
35 NC
34 NC
33 NC/A12
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 VSS
A12 for "8K" version, NC for "4K" version.
Configuration
Refresh
Row Address
Column Addressing
4X16E43V
4 Meg x 16
4K
4K (A0-A11)
1K (A0-A9)
4X16E83V
4 Meg x 16
8K
8K (A0-A12)
512 (A0-A8)
Part Number Example:
MEM4X16E43VTW-5
KEY TIMING PARAMETERS
SPEED
-5
-6
tRC
84ns
104ns
tRAC
50ns
60ns
tPC
20ns
25ns
tAA
25ns
30ns
tCAC
13ns
15ns
tCAS
8ns
10ns
4 MEG x 16 EDO DRAM PART NUMBERS
PART NUMBER
4X16E43VTW-x
4X16E83VTW-x
x = speed
REFRESH
ADDRESSING
4
8
PACKAGE
400-TSOP
400-TSOP
1

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