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PDF 2SC5393 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5393 | |
| Descripción | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
600
600
400
7
10
5
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 150V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
10 60
8
1V
2V
30 MHz
2.0 µs
0.3 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5393.PDF ] | |
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