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PDF 2SD1760 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1760 | |
| Descripción | Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
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Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1760
6.5±0.2
5.1
+0.2
−0.1
C0.5
2.3
+0.2
−0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power 2SD1760
dissipation
2SD1864
IC
PC
3 A (DC)
4.5 A (Pulse) ∗1
15 W (Tc=25°C)∗2
1W
Junction temperature
Tj 150 °C
Storage temperature
Tstg −55 to +150 °C
∗1 Single pulse, PW=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE (sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
∗ Measured using pulse current.
Min.
60
50
5
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.5
−
90
40
Max.
−
−
−
1
1
1
390
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=40V
VEB=4V
IC/IB=2A/0.2A
VCE=3V, IC=0.5A
VCE=5V, IE=−500mA, f=30MHz
VCB=10V, IE=0A, f=1MHz
∗
∗
∗
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD1760.PDF ] | |
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