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DT410EL fiches techniques PDF

Diodes Incorporated - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Numéro de référence DT410EL
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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DT410EL fiche technique
DT410EL
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Symbol
RQJA
RQJC
Value
100
±20
±2.1
±10
3.0
1.3
1.1
-65 to +150
Value
42
12
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
Notes:
the
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11601 Rev.C-4
1 of 4
DT410EL

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