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Numéro de référence | DU28120V | ||
Description | RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ | ||
Fabricant | ETC | ||
Logo | |||
1 Page
RF MOSFET Power Transistor, 12OW, 28V
2 - 175 MHz
DU2812OV
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
L
* Per side
at 25°C
Symbol
BV,,,
’05s
‘GSS
V
GSfW
GM
C ISS
Coss
C Rss
GP
‘1D
5
VSWR-T
Min
65
2.0
3.0
13
60
10
-
Max Units
Test Conditions
- V V,,=O.O V, l,s=30.0 mA’
6.0 mA V,,=28.0 v, v,,=o.o V’
6.0 pA v,,=20.0 v, v,,=o.o V’
6.0 V V,,=lO.O V, 1,,=600.0 mA’
- S V,,=lO.O V, 1,,=6000.0 A, AV,,=l .O V, 80 us Pulse’
270 pF V,,=28.0 V, F=l .O MHz’
240 pF V,,=28.0 V, F=l .O MHz’
48 PF V,,=28.0 V, F=l .O MHz’
- dB V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz
- % V,,=28.0 V, I,,=600 mA, P,,fl20.0 W, F=l7.5 MHz
- % V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz
3O:l - V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz
Specifications Subject to Change Without Notke.
MIA-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
D Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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Pages | Pages 3 | ||
Télécharger | [ DU28120V ] |
No | Description détaillée | Fabricant |
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