|
|
Numéro de référence | 74AHC3GU04DP | ||
Description | high-speed Si-gate CMOS device | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
74AHC3GU04
Inverter
Rev. 01 — 5 March 2004
Product data sheet
1. General description
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function.
2. Features
s Symmetrical output impedance
s High noise immunity
s ESD protection:
x HBM EIA/JESD22-A114-A exceeds 2000 V
x MM EIA/JESD22-A115-A exceeds 200 V
x CDM EIA/JESD22-C101 exceeds 1000 V.
s Low power dissipation
s Balanced propagation delays
s SOT505-2 and SOT765-1 package
s Output capability ±8 mA drive
s Specified from −40 °C to +85 °C and from −40 °C to +125 °C.
3. Quick reference data
Table 1: Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
Symbol Parameter
Conditions
Min Typ Max Unit
tPHL, tPLH
propagation delay nA to nY VCC = 5 V;
CL = 15 pF
- 2.5 5.5 ns
CI input capacitance
CPD power dissipation
capacitance
-
[1] -
[2]
3.0 10
4-
pF
pF
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
[2] The condition is VI = GND to VCC.
|
|||
Pages | Pages 17 | ||
Télécharger | [ 74AHC3GU04DP ] |
No | Description détaillée | Fabricant |
74AHC3GU04DC | high-speed Si-gate CMOS device | NXP Semiconductors |
74AHC3GU04DP | high-speed Si-gate CMOS device | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |