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Datasheet 6N80-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
6N8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 6N8 | Double Diode Vari-Mu Pentode VALVES diode | | |
| 2 | 6N80 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
6N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(6A, 800Volts)
The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. thr  nELL mosfet | | |
| 3 | 6N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N80
·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requireme  Inchange Semiconductor mosfet | | |
| 4 | 6N80 | N-CHANNEL POWER MOSFET 6N80
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 800V N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state  Unisonic Technologies mosfet | | |
| 5 | 6N80 | N-Channel Enhancement Mode Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V
ID25 6A 6A
RDS(on) 1.8 Ω 1.4 Ω
Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC  ETC data | |
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