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Número de pieza | 70511 | |
Descripción | N-Channel 75-V (D-S) 200C MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 70511 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! SPICE Device Model SUM110N08-05
Vishay Siliconix
N-Channel 75-V (D-S) 200°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70511
09-Jun-04
www.vishay.com
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 70511.PDF ] |
Número de pieza | Descripción | Fabricantes |
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