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Vishay Siliconix - P-Channel 30-V (D-S) MOSFET

Numéro de référence 72631
Description P-Channel 30-V (D-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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72631 fiche technique
New Product
P-Channel 30-V (D-S) MOSFET
Si7459DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
- 30 0.0068 @ VGS = - 10 V
ID (A)
- 22
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7459DP-T1 - E3
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 30
"25
- 22 - 13
- 17 - 10
- 60
- 4.5 - 1.6
5.4 1.9
3.4 1.2
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72631
S-32678—Rev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
52
1.0
Maximum
23
65
1.5
Unit
_C/W
www.vishay.com
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