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Numéro de référence | KSE13009L | ||
Description | High Voltage Switch Mode Applications | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KSE13009L
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
October 2008
1 TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
700
400
9
12
24
6
130
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
IEBO
hFE
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
IC = 10mA, IB = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6W
Min.
400
8
6
4
Typ.
180
Max.
1
40
30
1
1.5
3
1.2
1.6
1.1
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
ms
ms
ms
© 2007 Fairchild Semiconductor Corporation
KSE13009L Rev. 1.0.0
1
www.fairchildsemi.com
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Pages | Pages 4 | ||
Télécharger | [ KSE13009L ] |
No | Description détaillée | Fabricant |
KSE13009 | High Voltage Switch Mode Application | Fairchild Semiconductor |
KSE13009 | High Voltage Switch Mode Applications | Fairchild Semiconductor |
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KSE13009F | High Voltage Switch Mode Application | Fairchild Semiconductor |
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