KSE200 Datasheet PDF - Fairchild Semiconductor
| Part Number | KSE200 | |
| Description | Feature | |
| Manufacturers | Fairchild Semiconductor | |
| Logo |  |
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There is a preview and KSE200 download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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KSE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.)
• Complement to KSE210
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10mA, IB=0
VCB=40V, IE=0
VCB=40V, IE=0 @ TJ=125°C
VBE=8V, IC=0
VCE=1V, IC=500mA
VCE=1V, IC=2A
VCE=2V, IC=5A
IC=500mA, IB=50mA
IC=2A, IC=200mA
IC=5A, IB=1A
IC=5A, IB=1A
VCE=1V, IC=2A
VCE=10V, IC=100mA
VCB=10V, IE=0, f=0.1MHz
Value
40
25
8
5
15
150
- 65 ~ 150
Units
V
V
V
A
W
°C
°C
Min.
25
70
45
10
65
Max.
100
100
100
Units
V
nA
µA
nA
180
0.3
0.75
1.8
2.5
1.6
80
V
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KSE200 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ KSE200.PDF Datasheet ] | |
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