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Fairchild Semiconductor - High Voltage Power Switching In Inductive Circuits

Numéro de référence KSE5740
Description High Voltage Power Switching In Inductive Circuits
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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KSE5740 fiche technique
KSE5740/5741/5742
High Voltage Power Switching In Inductive
Circuits
• High Voltage Power Darlington TR
• Small Engine lgnition
• Switching Regulators
• Inverters
• Solenold and Relay Drivers
• Motor Control
NPN Silicon Darlington Transistor
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
BVCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: KSE5740
: KSE5741
: KSE5742
VCEV
Collector-Emitter Voltage : KSE5740
: KSE5741
: KSE5742
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: KSE5740
: KSE5741
: KSE5742
Test Condition
IC = 50mA, IB=0
ICEV
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VF Diode Forward Voltage
tD Delay Time
tR Rise Time
tS Storage Time
tF Fall Time
tSV Voltage Storage Time
tC Cross-over Time
* PW=5ms, Duty Cycle=10%
VCEV=Rate Value, VBE(OFF)=1.5V
VEB = 8V, IC= 0
VCE =5V, IC = 0.5A
VCE =5V, IC = 4A
IC =4A, IB = 0.2A
IC =8A, IB= 0.4A
IC =4A, IB = 0.2A
IC =8A, IB = 0.4A
IF =5A
VCC = 250V, IC(pk) = 6A
IB1 = IB2 = 0.25A
tP = 25µs
Duty Cycle1%
IC(pk) = 6A, VCE(pk) = 250V
IB1= 0.06A, VBE (off) = 5V
Value
300
350
400
600
700
800
8
8
16
2.5
5
80
150
- 65 ~ 150
Min. Typ.
300
350
400
50 100
200 400
0.04
0.5
8
2
4
2
Units
V
V
V
V
V
V
V
A
A
A
A
W
°C
°C
Max. Units
V
V
V
1 mA
75 mA
2V
3V
2.5 V
3.5 V
2.5 V
µs
µs
µs
µs
µs
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

PagesPages 5
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