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PDF IN4148 Data sheet ( Hoja de datos )
| Número de pieza | IN4148 | |
| Descripción | SILICON EPITAXIAL PLANAR SWITCHING DIODE | |
| Fabricantes | Shanghai Sunrise Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IN4148 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
IN4148
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
Reverse Voltage
VR 75
Peak Reverse Voltage
VRM 100
Forward Current (average)
Repetitive Forward Peak Current
IO 150
IFRM
300
Forward Voltage (IF=10mA)
VF 1
Reverse Current (VR=20V)
Reverse Current (VR=75V)
Reverse Current (VR=20V,TJ=100oC)
Capacitance
(note 1)
IR1
IR2
Ct
25
5
50
4
Reverse Recovery Time
(note 2)
IF
4
Thermal Resistance (junction to ambient)
(note 3)
Operating Junction and Storage Temperature Range
Notes:
Rθ(ja)
TSTG,TJ
0.35
-55 +175
1: VR=0V, f=1 MHz
2: IF=10mA to IR=1mA, VR=6V, RL=100
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
UNITS
V
V
mA
mA
V
nA
µA
A
pF
nS
oC/mW
oC
http://www.sse-diode.com
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| PDF Descargar | [ Datasheet IN4148.PDF ] | |
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