PDF K5T6432YT Data sheet ( Hoja de datos )

Número de pieza	K5T6432YT
Descripción	Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
Fabricantes	Samsung semiconductor
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No Preview Available ! K5T6432YT(B)M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Final Specification Draft Date Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 November 2001 1 page K5T6432YT(B)M Table 1. Flash Memory Top Boot Block Address (K5T6432YT) K5T6432YT Block Block Size Bank4 Bank3 Bank2 BA134 BA133 BA132 BA131 BA130 BA129 BA128 BA127 BA126 BA125 BA124 BA123 BA122 BA121 BA120 BA119 BA118 BA117 BA116 BA115 BA114 BA113 BA112 BA111 BA110 BA109 BA108 BA107 BA106 BA105 BA104 BA103 BA102 BA101 BA100 BA99 BA98 BA97 BA96 BA95 BA94 BA93 BA92 BA91 BA90 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords -5- MCP MEMORY Address Range Word Mode (x16) 3FF000H-3FFFFFH 3FE000H-3FEFFFH 3FD000H-3FDFFFH 3FC000H-3FCFFFH 3FB000H-3FBFFFH 3FA000H-3FAFFFH 3F9000H-3F9FFFH 3F8000H-3F8FFFH 3F0000H-3F7FFFH 3E8000H-3EFFFFH 3E0000H-3E7FFFH 3D8000H-3DFFFFH 3D0000H-3D7FFFH 3C8000H-3CFFFFH 3C0000H-3C7FFFH 3B8000H-3BFFFFH 3B0000H-3B7FFFH 3A8000H-3AFFFFH 3A0000H-3A7FFFH 398000H-39FFFFH 390000H-397FFFH 388000H-38FFFFH 380000H-387FFFH 378000H-37FFFFH 370000H-377FFFH 368000H-36FFFFH 360000H-367FFFH 358000H-35FFFFH 350000H-357FFFH 348000H-34FFFFH 340000H-347FFFH 338000H-33FFFFH 330000H-337FFFH 328000H-32FFFFH 320000H-327FFFH 318000H-31FFFFH 310000H-317FFFH 208000H-20FFFFH 300000H-307FFFH 2F8000H-2FFFFFH 2F0000H-2F7FFFH 2E8000H-2EFFFFH 2E0000H-2E7FFFH 2D8000H-2DFFFFH 2D0000H-2D7FFFH Revision 1.0 November 2001 5 Page K5T6432YT(B)M MCP MEMORY Flash MEMORY COMMAND DEFINITION Table 3. Command List (F-WP = VIH or VIL) Command Mode 1st Cycle Address Data1) (DQ0-15) Read Array Write X FFH Sequential Page Read Write X F3H Device Identifier Read Status Register Clear Status Register Suspend Resume Write Write Write Write Write Bank2) Bank2) X Bank2) Bank2) 90H 70H 50H B0H D0H Mode 2nd Cycle Address A21-A18 A0 Read Read Read SA5) Bank2) IA3) Bank2) Data1) (DQ0-15) RD0 ID SRD4) Notes : 1. Upper byte data (DQ15-DQ8) is ignored. 2. Bank=Bank address (bank1-Bank4:A21-18) 3. IA=ID code address:A0=VIL (Manufacture’s code):A0=VIH (Device code), ID=ID code 4. SRD=Status Register Data 5. SA=Sequential page Address:A21-A3, A2-A0:0h 6. SA+i;A21-A3 must be flxed and A2-A0 must be incremented from 0h to 7h. Mode 3rd Cycle Address Data1) (DQ0-15) Read SA+i6) RDi Table 4. Command List (F-WP = VIH) Command Mode 1st Cycle Address Data1) (DQ0-15) Word Program Write Bank 40H Page Program Write Bank 41H Page Buffer to Flash Write Bank 0EH Block Erase / Confirm Write Bank 20H Erase All Unlocked Blocks Write X A7H Clear Page Buffer Write X 55H Single Date Load to Page Buffer Write Bank 74H Flash to Page Buffer Write Bank F1H Mode Write Write Write Write Write Write Write Write 2nd Cycle Address Data1) (DQ0-15) WA2) WD2) WA03) WD03) WA4) D01) BA5) D01) X D01) X D01) WA WD RA6) D01) Mode 3rd Cycle Address Data1) (DQ0-15) Write WAn3) WDn3) Notes : 1. Upper byte data (DQ15-DQ8) is ignored. 2. WA=Write Address, WD=Write Data 3. WA0, WAn=Write Address, WD0, WDn=Write Data, Write address and write data must be provided sequentially from 00H to 7FH for A6-A0. Page size is 128 words (128-word x 16-bit), and also A21-A7(block address, page address) must be valid. 4. WA=Write Address:A21-A7 (block address, page address) must be valid. 5. BA=Block Address:A21-A12(Bank1), A21-A15(Bank2, Bank3, Bank4) 6. RA=Read Address:A21-A7 (block address, page address) must be valid. - 11 - Revision 1.0 November 2001 11 Page

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