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What is K6E0808C1E-I15?

This electronic component, produced by the manufacturer "Samsung semiconductor", performs the same function as "32K x 8 Bit High-Speed CMOS Static RAM".


K6E0808C1E-I15 Datasheet PDF - Samsung semiconductor

Part Number K6E0808C1E-I15
Description 32K x 8 Bit High-Speed CMOS Static RAM
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 


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Total 9 Pages



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No Preview Available ! K6E0808C1E-I15 datasheet, circuit

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
Document Title
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0 Release to Final Data Sheet.
Rev. 2.0 2.1. Add Low Power Version.
2.2. Add data retention charactoristic.
Draft Data
Aug. 1. 1998
Nov. 2. 1998
Feb. 25. 1999
Remark
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 2.0
Feburary 1999

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K6E0808C1E-I15 equivalent
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
WRITE CYCLE*
Parameter
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
K6E0808C1E-10
Min Max
10 -
8-
0-
8-
8-
10 -
0-
05
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
tDW 5
tDH 0
tOW 0
-
-
-
* The above parameters are also guaranteed at industrial temperature range.
K6E0808C1E-12
Min Max
12 -
9-
0-
9-
9-
12 -
0-
06
6-
0-
0-
K6E0808C1E-15
Min Max
15 -
10 -
0-
10 -
10 -
15 -
0-
07
7-
0-
0-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
tRC
tAA
Data Out
Previous Valid Data
Valid Data
-5-
Revision 2.0
Feburary 1999


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6E0808C1E-I15 electronic component.


Information Total 9 Pages
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Featured Datasheets

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K6E0808C1E-I10The function is 32K x 8 Bit High-Speed CMOS Static RAM. Samsung semiconductorSamsung semiconductor
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K6E0808C1E-I15The function is 32K x 8 Bit High-Speed CMOS Static RAM. Samsung semiconductorSamsung semiconductor

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