K6F1616T6B-TF55 Datasheet PDF - Samsung semiconductor
| Part Number | K6F1616T6B-TF55 | |
| Description | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
| Manufacturers | Samsung semiconductor | |
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K6F1616T6B Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed Isb1(max.) from 25uA to 15uA
1.0 Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003
June 17, 2003
Remark
Preliminary
Preliminary
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003
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K6F1616T6B Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.2V to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL=30pF+1TTL
AC CHARACTERISTICS (Vcc=2.7~3.6V, TA=-40 to 85°C)
Parameter List
Symbol
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
LB, UB valid to data output
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
OE disable to high-Z output
UB, LB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
tRC
tAA
tCO
tOE
tBA
tLZ
tOLZ
tBLZ
tOH
tHZ
tOHZ
tBHZ
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
tBW
VTM3)
R12)
CL1)
R22)
1. Including scope and jig capacitance
2. R1=3070Ω, R2=3150Ω
3. VTM =2.8V
Speed Bins
55ns
70ns
Min Max Min Max
55 - 70 -
- 55 - 70
- 55 - 70
- 25 - 35
- 55 - 70
10 - 10 -
5- 5 -
10 - 10 -
10 - 10 -
0 20 0 25
0 20 0 25
0 20 0 25
55 - 70 -
45 - 60 -
0- 0 -
45 - 60 -
40 - 50 -
0- 0 -
0 20 0 20
25 - 30 -
0- 0 -
5- 5 -
45 - 60 -
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
VDR
IDR
tSDR
tRDR
Test Condition
CS1≥Vcc-0.2V1), VIN≥0V
Vcc=1.5V, CS1≥Vcc-0.2V1), VIN≥0V
See data retention waveform
1. 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0≤CS2≤0.2V(CS2 controlled)
2. Typical value are measured at TA=25°C and not 100% tested.
Min Typ Max Unit
1.5 - 3.6 V
-
1.02)
10
µA
0-
tRC -
- ns
-
5 Revision 1.0
August 2003
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6F1616T6B-TF55 electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K6F1616T6B-TF55.PDF Datasheet ] | |
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