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Samsung semiconductor - 64Kx36-Bit Synchronous Pipelined Burst SRAM

Numéro de référence K7A203600A
Description 64Kx36-Bit Synchronous Pipelined Burst SRAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K7A203600A fiche technique
K7A203600A
PRELIMINARY
64Kx36 Synchronous SRAM
Document Title
64Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
History
0.0 Initial draft
0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0
Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0
0.2 Add tCYC 183MHz, 225MHz
Change DC Characteristics.
Icc value from 260mA to 280mA at -72
ISB1 value from 10mA to 20mA
ISB2 value from 10mA to 20mA
1.0 Final spec release.
2.0 Add VDDQ Supply voltage( 2.5V )
Draft Date
May. 19. 1998
July. 13. 1998
Remark
Preliminary
Preliminary
Aug. 31. 1998
Preliminary
Nov. 16. 1998
Dec. 02. 1998
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - December 1998
Rev 2.0

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