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PDF ATF-501P8-BLK Data sheet ( Hoja de datos )
| Número de pieza | ATF-501P8-BLK | |
| Descripción | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | |
| Fabricantes | Agilent(Hewlett-Packard) | |
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Agilent ATF-501P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s ATF-
501P8 is a single-voltage high
linearity, low noise E-pHEMT
housed in an 8-lead JEDEC-
standard leadless plastic chip
carrier (LPCC[3]) package. The
device is ideal as a medium-
power amplifier. Its operating
frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package
measures only 2mm x 2mm x
0.75mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85ºC. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
0Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and
identification:
“0P” = Device Code
“x” = Date code indicates the month of
manufacture.
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product
specifications
• Small package size: 2.0 x 2.0 x
0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option
available
Specifications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain
compression
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM[4]
• 65% PAE
• 23oC/W thermal resistance
Applications
• Front-end LNA Q2 and Q3, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
1 page  
ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 280 mA
55
4.5V
5.5V
50 3.5V
45
40
35
30
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
25
20
15
10
4.5V
5
5.5V
3.5V
0
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Figure 9. Gain vs. Ids and Vds at 2 GHz.
60
50
40
30
20 4.5V
5.5V
3.5V
10
0
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Figure 11. PAE vs. Ids and Vds at 2 GHz.
35
30
25
4.5V
5.5V
3.5V
20
15
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Figure 10. P1dB vs. Ids and Vds at 2 GHz.
5
5 Page 
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
dB Mag.
Ang.
0.1
0.911 -132.8
31.6 38.110 112.4
-39.2 0.011 30.3
0.2
0.910 -156.5
26.2 20.415 100.0
-38.4 0.012 24.9
0.3
0.911 -165.8
22.8 13.848 94.6
-37.7 0.013 26.2
0.4
0.913 -171.1
20.3 10.397 91.3
-37.7 0.013 28.9
0.5
0.907 -173.7
18.7 8.640 88.5
-36.5 0.015 31.8
0.6
0.910 -176.3
17.2 7.232 86.2
-35.9 0.016 34.5
0.7
0.910 -178.6
15.8 6.200 84.2
-35.9 0.016 36.8
0.8
0.906 179.7
14.7 5.431 82.2
-35.4 0.017 38.8
0.9
0.913 178.0
13.7 4.826 80.3
-34.9 0.018 40.6
1
0.907 176.4
12.7 4.328 78.4
-34.0 0.020 42.3
1.5
0.904 170.3
9.2 2.878 70.4
-32.0 0.025 47.0
2
0.906 165.9
7.1 2.275 64.5
-30.5 0.030 48.7
2.5
0.904 164.8
6.6 2.146 63.2
-30.2 0.031 49.0
3
0.907 160.9
5.0 1.783 57.9
-28.9 0.036 49.0
4
0.906 154.7
3.1 1.424 49.4
-27.3 0.043 47.7
5
0.903 144.8
0.9 1.114 37.7
-24.7 0.058 44.2
6
0.896 134.7
-0.8 0.907 22.7
-22.7 0.073 36.2
7
0.903 125.6
-3.2 0.691 8.9
-22.2 0.078 27.9
8
0.903 115.0
-4.3 0.612 -1.0
-20.7 0.092 22.4
9
0.891 105.6
-5.3 0.544 -13.3
-19.5 0.106 12.8
10
0.885 94.9
-6.0 0.504 -20.0
-18.8 0.115 10.2
11
0.873 84.3
-6.7 0.465 -28.4
-17.5 0.133 0.9
12
0.866 74.0
-7.9 0.403 -41.1
-17.3 0.137 -5.8
13
0.849 64.3
-7.8 0.406 -47.3
-15.9 0.161 -12.1
14
0.849 55.7
-8.4 0.379 -57.9
-15.2 0.174 -21.3
15
0.841 46.6
-9.0 0.353 -69.0
-14.5 0.189 -30.3
16
0.828 39.0
-9.4 0.337 -73.1
-14.2 0.196 -37.1
17
0.817 31.0
-9.8 0.322 -83.0
-13.2 0.218 -45.1
18
0.809 23.9
-10.3 0.304 -92.7
-12.4 0.240 -52.4
S22
Mag. Ang.
0.649
0.692
0.701
0.704
0.693
0.694
0.696
0.697
0.695
0.694
0.698
0.702
0.701
0.699
0.708
0.701
0.699
0.654
0.647
0.642
0.697
0.743
0.735
0.768
0.801
0.800
0.763
0.787
0.783
-162.1
-171.8
-176.2
-178.9
179.7
178.2
176.9
175.6
174.8
173.7
169.4
165.5
162.8
159.0
153.6
146.7
145.1
134.0
117.3
115.4
104.4
91.3
87.9
78.3
68.8
65.5
51.4
38.7
29.3
MSG/MAG K
dB factor
35.4 0.200
32.3 0.340
30.3 0.472
29.0 0.600
27.6 0.679
26.6 0.747
25.9 0.838
25.0 0.914
24.3 0.930
23.4 0.984
18.2 1.154
16.1 1.193
15.5 1.231
14.0 1.246
12.0 1.275
9.7 1.268
7.9 1.256
5.9 1.355
4.6 1.375
2.9 1.495
2.4 1.462
1.6 1.416
0.1 1.607
0.0 1.464
-0.2 1.361
-0.9 1.376
-2.0 1.547
-2.4 1.491
-3.2 1.513
40 Notes:
1. S parameter is measured on a microstrip line
30 S21 made on 0.025 inch thick alumina carrier. The
MSG
MAG input reference plane is at the end of the gate
20 lead. The output reference plane is at the end
of the drain lead.
10
0
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 38. MSG/MAG & |S21|2 vs. Frequency
at 4.5V 360mA.
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet ATF-501P8-BLK.PDF ] | |
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