IRF054 Datasheet PDF - International Rectifier
| Part Number | IRF054 | |
| Description | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF054 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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PD - 90640
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRF054
60V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRF054
60V 0.022Ω
ID
45A*
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS =0V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current limited by pin diameter.
For footnotes refer to the last page
www.irf.com
Units
45*
31 A
220
150 W
1.2 W/°C
±20 V
480 mJ
-A
- mJ
4.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
1
01/24/01
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Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF054
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF054 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF054.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRF054 | The function is REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE). International Rectifier | |
| IRF054 | The function is N-Channel MOSFET Transistor. Inchange Semiconductor |  |
| IRF054 | The function is Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE. New Jersey Semiconductor |  |
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