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PDF IRF1302 Data sheet ( Hoja de datos )
| Número de pieza | IRF1302 | |
| Descripción | Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF1302 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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AUTOMOTIVE MOSFET
PD - 94591
IRF1302
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 4.0mΩ
ID = 180A
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
180
130
700
230
1.5
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mount)
www.irf.com
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
°C/W
1
10/31/02
1 page  
IRF1302
200
LIMITED BY PACKAGE
150
100
50
0
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF1302.PDF ] | |
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