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IRF140 fiches techniques PDF

Intersil Corporation - 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET

Numéro de référence IRF140
Description 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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IRF140 fiche technique
Data Sheet
IRF140
March 1999 File Number 2306.3
28A, 100V, 0.077 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF140
TO-204AE
IRF140
NOTE: When ordering, use the entire part number.
Features
• 28A, 100V
• rDS(ON) = 0.077
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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