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XN02501 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon NPN epitaxial planer transistor

شماره قطعه XN02501
شرح مفصل Silicon NPN epitaxial planer transistor
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 





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XN02501 شرح
Composite Transistors
XN2501
Silicon NPN epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
(Base-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SD601A × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
60
50
7
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5W
Internal Connection
Tr1
5
1
4
32
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Ratio between 2 elements
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE (small/large)*1
VCE(sat)
fT
Cob
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
60
50
7
160
0.5
typ max Unit
V
V
V
0.1 µA
100 µA
460
0.99
0.1 0.3
V
150 MHz
3.5 pF
1

قانون اساسیصفحه 2
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XN02501 Silicon NPN epitaxial planer transistor Panasonic Semiconductor
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