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XN09D57 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)

شماره قطعه XN09D57
شرح مفصل Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 





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XN09D57 شرح
Composite Transistors
XN09D57
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
0.50+–00..0150
0.30+–00..0150
Unit: mm
0.16+–00..0160
Features
Two elements incorporated into one package (Tr + SBD)
Reduction of the mounting area and assembly cost by one half
Low collector-emitter saturation voltage VCE(sat)
Basic Part Number
XN9D57 + MA3XD11
65
4
123
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
Display at No.1 lead
10°
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr
Collector-base voltage
VCBO
15
(Emitter open)
V
Collector-emitter voltage
(Base open)
VCEO
15
V
Emitter-base voltage
(Collector open)
VEBO
5
V
SBD
Collector current
Peak collector current
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak
forward surge current
IC
ICP
VR
VRRM
IF(AV)
IFSM
2.5
10
20
25
1
2
A
A
V
V
A
A
Overall
Total power dissipation *
Junction temperature
Storage temperature
PT 600 mW
Tj 125 °C
Tstg 55 to +125 °C
Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
Electrical Characteristics Ta = 25°C ± 3°C
Tr
1: Emitter
2: Base
3: Anode
4: Collector (Cathode)
5: Collector (Cathode)
6: Collector (Cathode)
Mini6-G1 Package
Marking Symbol: EW
Internal Connection
65
4
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −2 V, IC = −100 mA
VCE = −2 V, IC = −2.5 A
IC = −1 A, IB = −10 mA
IC = −2.5 A, IB = −50 mA
15
15
5
0.1
200 560
100
140
270 320
V
V
V
µA
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: March 2004
SJJ00245CED
1

قانون اساسیصفحه 4
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