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PDF XN1507 Data sheet ( Hoja de datos )
| Número de pieza | XN1507 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XN1507 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Composite Transistors
XN1507
Silicon NPN epitaxial planer transistor
For high break down voltage and low noise amplification
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SD814 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
150
150
5
50
100
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 4O
Internal Connection
Tr1
5
1
4
32
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Ratio between 2 elements
VCEO
VEBO
ICBO
hFE
hFE (small/large)*1
VCE(sat)
fT
Cob
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCB = 100V, IE = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
150
5
90
0.5
typ max Unit
V
V
1 µA
450
0.99
1V
150 MHz
2.3 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN1507.PDF ] | |
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