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PDF XN1871 Data sheet ( Hoja de datos )
| Número de pieza | XN1871 | |
| Descripción | Silicon N-channel junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN1871
Silicon N-channel junction FET
For amplification of the low frequency
s Features
q Two elements incorporated into one package.
(Soure-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SK198 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Drain to source voltage
Rating Gate to drain voltage
of
element Drain current
Gate current
Total power dissipation
Overall Channel temperature
Storage temperature
VDSX
VGDO
ID
IG
PT
Tch
Tstg
30
–30
20
10
300
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Gate (Tr1)
2 : Gate (Tr2)
3 : Drain (Tr2)
4 : Source
5 : Drain (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5T
Internal Connection
FET 1
5
1
4
32
FET 2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
IDSS
IGSS
VGSC
gm
gm
Common source short-circuit input capacitance Ciss
Common source reverse transfer capacitance Crss
VDS = 10V, VGS = 0
0.5 12 mA
VGS = –30V, VDS = 0
–100 nA
VDS = 10V, ID = 10µA
– 0.1
–1.5 V
VDS = 10V, ID = 0.5mA, f = 1MHz
4
mS
VDS = 10V, VGS = 0V, f = 1MHz
4 12
mS
VDS = 10V, VGS = 0V, f = 1MHz
14 pF
VDS = 10V, VGS = 0V, f = 1MHz
3.5 pF
Noise voltage
NV
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
60 mV
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN1871.PDF ] | |
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