DataSheetWiki


YG912S2R fiches techniques PDF

Fuji Electric - LOW LOSS SUPER HIGH SPEED DIODE

Numéro de référence YG912S2R
Description LOW LOSS SUPER HIGH SPEED DIODE
Fabricant Fuji Electric 
Logo Fuji Electric 





1 Page

No Preview Available !





YG912S2R fiche technique
YG912S2R
(200V / 10A TO-22OF15)
LOW LOSS SUPER HIGH SPEED DIODE
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
5.08±0.4
JEDEC
EIAJ
SC-67
0.6±0.2
2.7±0.2
Connection Diagram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Symbol
Conditions
1
Rating
3
Unit
Repetitive peak reverse voltage
VRRM
200 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
Terminals to Case,
AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave
Sine wave 10ms
200
1500
10
80
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=10A
Reverse current
IR VR=VRRM
Reverse recovery time
trr IF=0.1A,IR=0.2A,Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
0.98
200
35
3.5
Unit
V
µA
ns
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

PagesPages 3
Télécharger [ YG912S2R ]


Fiche technique recommandé

No Description détaillée Fabricant
YG912S2 LOW LOSS SUPER HIGH SPEED RECTIFIER Fuji Electric
Fuji Electric
YG912S2R LOW LOSS SUPER HIGH SPEED DIODE Fuji Electric
Fuji Electric

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche