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EIC discrete Semiconductors - SILICON ZENER DIODES

Numéro de référence Z1130
Description SILICON ZENER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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Z1130 fiche technique
1N4728 - 1N4764
Z1110 - Z1200
VZ : 3.3 - 200 Volts
PD : 1 Watt
FEATURES :
* Complete voltage range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherw ise specified
Rating
DC Power Dissipation at TL = 50 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
PD
VF
RθJA
TJ
Ts
Value
1.0
1.2
170
- 55 to + 175
- 55 to + 175
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
1.25
1.00
Fig. 1 POWER TEMPERATURE DERATING CURVE
L = 3/8" (9.5mm)
0.75
0.50
0.25
Unit
Watt
Volts
K/W
°C
°C
0 25 50 75 100 125 150 175
TL, LEAD TEMPERATURE (°C)
UPDATE : SEPTEMBER 9, 2000

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