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Supertex Inc - N-Channel Enhancement-Mode Vertical DMOS FET

Numéro de référence VN0808
Description N-Channel Enhancement-Mode Vertical DMOS FET
Fabricant Supertex Inc 
Logo Supertex  Inc 





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VN0808 fiche technique
VN0808
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
TO-92
VN0808
VN0808L-G
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
80
RDS(ON)
(max)
(Ω)
4.0
Pin Configuration
ID(ON)
(min)
(A)
1.5
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±30V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-92 (L)
Product Marking
Si VN YY = Year Sealed
0 8 0 8 L WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (L)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com

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