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VG26S17405J-6 fiches techniques PDF

Vanguard International Semiconductor - 4/194/304 x 4 - Bit CMOS Dynamic RAM

Numéro de référence VG26S17405J-6
Description 4/194/304 x 4 - Bit CMOS Dynamic RAM
Fabricant Vanguard International Semiconductor 
Logo Vanguard International Semiconductor 





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VG26S17405J-6 fiche technique
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Description
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.
Features
• Single 5V( ±10%) or 3.3V(+10%,-5%) only power supply
• High speed t RAC acess time: 50/60ns
• Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
Document:1G5-0162
Rev.1
Page 1

PagesPages 27
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