DataSheet39.com

What is VG36256401A?

This electronic component, produced by the manufacturer "Vanguard International Semiconductor", performs the same function as "CMOS Synchronous Dynamic RAM".


VG36256401A Datasheet PDF - Vanguard International Semiconductor

Part Number VG36256401A
Description CMOS Synchronous Dynamic RAM
Manufacturers Vanguard International Semiconductor 
Logo Vanguard International Semiconductor Logo 


There is a preview and VG36256401A download ( pdf file ) link at the bottom of this page.





Total 30 Pages



Preview 1 page

No Preview Available ! VG36256401A datasheet, circuit

VIS
Description
Preliminary
VG36256401A
VG36256801A
VG36256161A
CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank,
8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations
provide wide choice for different applications. It is designed with the state-of-the-art technology to meet stan-
dard PC100 or high speed PC133 requirement. Four internal independent banks greatly increase the perfor-
mance efficiency. It is packaged in JEDEC standard pinout and standard plastic 54-pin TSOP package.
Features
• Single 3.3V ( ±0.3V) power supply
• High speed clock cycle time : 7.5ns/10ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A13 & A14 (Bank select)
• Each Banks can operate simultaneously and independently
• I/O level : LVTTL compatible
• Random column access in every cycle
• x4, x8, x16 organization
• Input/Output controlled by DQM, LDQM, UDQM
• 8,192 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
The information shown is subject to change without notice.
Document : 1G5-0155
Rev.1
Page 1

line_dark_gray
VG36256401A equivalent
VIS
Preliminary
VG36256401A
VG36256801A
VG36256161A
CMOS Synchronous Dynamic RAM
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test Conditions
Operating current
Precharge standby
current in Power
down mode
Precharge standby
current in Nonpower
down mode
Active standby current
in Power
down mode
Active standby
current in Nonpower
down mode
Operating current
(Burst mode)
Refresh current
Self refresh Current
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
Burst length = 1
One bank active
tRC tRC(MIN.), Io = 0mA
x4
x8
x16
CKE VIL(MAX.) tCK = min.
CKE VIL(MAX.) tCK =
CKE VIH(MIN.) tCK = min.
CS VIH(MIN.)
Input signals are changed one
time during 2 CLK cycles.
CKE VIH(MIN.) tCK =
CLK VIL(MAX.)
Input signals are stable.
CKE VIL(MAX.) tCK = min.
CKE VIL(MAX.) tCK =
CKE VIH(MIN.) tCK = min.
CS VIH(MIN.)
Input signals are changed one
time during 2CLKs
CKE VIH(MIN.) tCK =
CLK VIL(MAX.)
Input signals are stable.
tCK tCK(MIN. Io = 0mA
All banks Active
tRC = 4 x tRC(MIN)
CKE0.2V
x4
x8
x16
Input Ieakage current
(Inputs)
Intput leakage current
(I/O pins)
Output Low Voltage
Output High Voltage
lLI
lLO
VOL
VOH
VIN 0, VIN VDD(MAX)
Pins not under test = 0V
VOUT 0, VOUT VDD(MAX)
DQ# in H - Z., Dout Disabled
IOL = 2mA
IOH = -2mA
-75
Min Max
145
155
165
2
2
20
7
7
5
30
20
150
160
170
190
1
-1 1
-1.5 1.5
0.4
2.4
-8H
Min Max
115
125
135
2
2
20
7
7
5
30
20
120
130
140
190
1
-1 1
-1.5 1.5
0.4
2.4
Unit Notes
mA 1
mA
mA
mA
mA
mA 2
mA 3
mA
uA
uA
V4
V4
Notes : 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.)
4. For LVTTL compatible.
Document : 1G5-0155
Rev.1
Page 5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for VG36256401A electronic component.


Information Total 30 Pages
Link URL [ Copy URL to Clipboard ]
Download [ VG36256401A.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
VG36256401AThe function is CMOS Synchronous Dynamic RAM. Vanguard International SemiconductorVanguard International Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

VG36     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search