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Vanguard International Semiconductor - CMOS Synchronous Dynamic RAM

Numéro de référence VG36641641BT
Description CMOS Synchronous Dynamic RAM
Fabricant Vanguard International Semiconductor 
Logo Vanguard International Semiconductor 





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VG36641641BT fiche technique
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Description
Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is
fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
• Single 3.3V (±0.3V ) power supply
• High speed clock cycle time : 8/10ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,&Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A12 & A13 (Bank select)
• Each Bank can operate simultaneously and independently
• LVTTL compatible I/O interface
• Random column access in every cycle
• X16 organization
• Input/Output controlled by LDQM and UDQM
• 4,096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
The information shown is subject to change without notice.
Document : 1G5-0127
Rev2
Page 1

PagesPages 30
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