|
|
Numéro de référence | VHB25-28S | ||
Description | NPN SILICON RF POWER TRANSISTOR | ||
Fabricant | Advanced Semiconductor | ||
Logo | |||
VHB25-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
65 V
VCEO
35 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
40 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.4 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10725
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VE = 28 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
5 ---
UNITS
V
V
V
mA
---
COB VCB = 28 V
f = 1.0 MHz
50 pF
fT VCE = 10 V
PG VCC = 28 V
ηC
IC = 200 mA
POUT = 25 W
f = 100 MHz
f = 175 MHz
250
8.5
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
|
|||
Pages | Pages 1 | ||
Télécharger | [ VHB25-28S ] |
No | Description détaillée | Fabricant |
VHB25-28F | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
VHB25-28S | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |