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PDF U2102B Data sheet ( Hoja de datos )
| Número de pieza | U2102B | |
| Descripción | Multifunction Timer | |
| Fabricantes | TEMIC Semiconductors | |
| Logotipo |  |
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Multifunction Timer
U2102B
Description
The monolithic integrated bipolar circuit U2102B is an
MOSFET or IGBT control circuit which allows
realization of an extremely wide range of timer and
dimmer functions. The integrated current monitoring
function additionally permits the power switch to be
reliably protected without an additional fuse.
Features
D Integrated reverse phase control
D Two- or three-wire applications
D Mode selection:
– Zero-voltage switch with static output
– Two-stage reverse phase control with switch-off
– Two-stage reverse phase control
D Current monitoring:
– High-speed short-circuit monitoring with output
– High-current monitoring with integrating buffer
D Integrated chip temperature monitoring
D Adjustable and retriggerable tracking time
D External window adjustment for sensor input
D Enable input for triggering
Applications
D Motion detectors
D Time-delay relays
D Dimmers
D Reverse phase controls
D Timers
Package: DIP16, SO16
1
VRef
Voltage monitoring
2 Reverse
3 phase
4 control
5
RC oscillator
Divider
6 Programing
Control
logic
16
Synchronization
Voltage limitation
Push
pull
Current monitoring
94 8666
15
13
14
12
11
Triggering with buffers
7 89
TELEFUNKEN Semiconductors
Rev. A1, 30-May-96
Temperature
monitoring
Figure 1. Block diagram
Test logic
10
1 (16)
1 page  
U2102B
In the case of ac loads, it is necessary to make a distinction
for power supply purposes between the individual
operating modes. In reverse phase control mode, figure 4,
Pin 15 must be additionally supplied with power via a
dropping resistor, since no current flows in Pin 16 when
the power switch is switched on. Here, the dropping
resistor, R1, is connected before the rectifier bridge and
therefore has only one mains half-wave. R1 is then calcu-
lated as follows:
+ @ @R1max
0.85
VNmin –VS
2 Itot
Rsync
D1
Load
Vmains
Sync.
16
R1
Voltage
limitation
+VS
15
Push
pull
14
C1
RG
IGBT
Figure 4.
Power supply in reverse phase
control mode for ac loads
Temp.
monit.
GND
13
95 9883
In two-wire systems, the additional power supply at
Pin 15 is not possible (see figure 4, by omitting R1 and
Diode D1). In this case, the resistor Rsync is identical with
R1 and should be as low as the power dissipation allows
it. A sufficiently large residual phase angle must remain
in this case in order to guarantee the device supply.
Rsh
The power supply is simplified if the device is operated
as a static zero-voltage switch for ac loads (see figure 5).
All delay times are twice as long here, since synchro-
nization of the module is tapped before the rectifier
bridge.
Sync.
R1= Rsync
16
Voltage
limitation
+VS
15
Push
pull
14
Temp.
monit.
GND
13
95 9884
C1
RG
IGBT
Rsh
Load
Vmains
Figure 5.
Power supply as static zero
voltage switch for ac loads
TELEFUNKEN Semiconductors
Rev. A1, 30-May-96
5 (16)
5 Page 
U2102B
Parameters
Window discriminator
Input current
Upper threshold
Lower threshold
Input current window adjustment
Minimum window:
Lower threshold
Upper threshold
Maximum window:
Lower threshold
Upper threshold
Enable-Schmitt trigger
Input current
Enable threshold
Blocking threshold:
Output stage OFF
Output stage ON, except in the
case of two-stage reverse phase
control in second stage (a)
Threshold for test mode
Current monitoring
Input current
Switch-off threshold 1
Switch-off threshold 2
Switching output
Leakage current
Saturation voltage
Push-pull output stage
Upper saturation voltage,
ON state
Lower saturation voltage,
OFF state
Output current
Test Conditions / Pin Symbol
v v0 V V8 Vl Pin 8
Pins 8 and 9
v v0 V V9 V1
V9 = V13
Pin 9
Pin 8
V9 = V1
Pin 8
Pin 7
v v0 V V7 Vl
"Ii
VTU
"VTL
Ii
VTL1
VTU1
VTL2
VTU2
"Ii
VT
VT
Pin 11
v v0 V V11 V1
Pin 12
vV11 < 450 mV, V12 V15
V11 > 550 mV
I12 = 0.5 mA
I12 = 10 mA
VT
"Ii
VT1
VT2
Ilkg
VSat
VSat
I14 = – 10 mA
Pins 14 and 15
I14 = 10 mA
Pin 14
– VSat
VSatL
ON state
OFF state
Pin 14 –IO
IO
Min. Typ. Max.
500
@ @0.55 VRef + (0.2 V9)
@ @0.45 VRef – (0.2 V9)
500
2.05 2.75
2.55 3.75
1.1 1.25
3.4 3.75
2.45
2.95
1.4
4.1
2.3 2.5
1.8 2
0.45 0.5
500
2.7
2.2
0.55
85 100
80 100
450 500
50
50
115
500
120
550
1
1.0
1.2
2.4
1.2
Unit
nA
V
nA
V
V
nA
V
V
mV
nA
mV
mV
mA
V
V
V
V
mA
TELEFUNKEN Semiconductors
Rev. A1, 30-May-96
11 (16)
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet U2102B.PDF ] | |
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