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PDF U2270B Data sheet ( Hoja de datos )
| Número de pieza | U2270B | |
| Descripción | Read / Write Base Station IC | |
| Fabricantes | TEMIC Semiconductors | |
| Logotipo |  |
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Read / Write Base Station IC
U2270B
Description
IC for IDIC® *) read-write base stations
The U2270B is a bipolar integrated circuit for read-write
base stations in contactless identification and immo-
bilizer systems.
The IC incorporates the energy transfer circuit to supply
the transponder. It consists of an on-chip power supply, an
oscillator, and a coil driver optimized for automotive-
specific distances. It also includes all signal-processing
circuits which are necessary to form the small input signal
into a microcontroller-compatible signal.
The U2270B is well suitable to perform read operations
with e5530-GT and TK5530-PP transponders and also
performs read-write operations with TK5550-PP and
TK5560-PP transponders.
Features
D Carrier frequency fosc 100 KHz – 150 KHz
D Typical data rate up to 5 Kbaud at 125 KHz
D Suitable for Manchester and Bi-phase modulation
D Power supply from the car battery or from
5-V regulated voltage
D Optimized for car immobilizer applications
D Tuning capability
D Microcontroller-compatible interface
D Low power consumption in standby mode
D Power supply output for microcontroller
Applications
D Car immobilizers
D Animal identification
D Access control
D Process control
D Further industrial applications
Case: SO16 U2270B-FP
Transponder / TAG
Read / write base station
Transp.
IC
e5530
e5550
e5560
RF– Field
typ. 125 kHz
Osc
U2270B
NF read channel
Carrier
enable
Data
output
MCU
Unlock
System
TK5530-PP
e5530-GT
TK5550-PP
TK5560-PP
Figure 1.
*) IDIC® stands for IDentification Integrated Circuit and is a trademark of TEMIC.
9300
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
1 (13)
1 page  
U2270B
Oscillator (Osc)
The frequency of the on-chip oscillator is controlled by a
current fed into the RF input. An integrated compensation
circuit ensures a widly temperature and supply voltage in-
dependent frequency which is selected by a fixed resistor
Wbetween RF (pin 15) and VS (pin 14). For 125 kHz a resis-
tor value of 110 k is defined. For other frequencies, use
the following formula:
+ WRf
14375
f0 [kHz]
–
5
k
This input can be used to adjust the frequency close to the
resonance of the antenna. For more details refer to the ap-
plicatons and the application note ANT019.
VCC
2 kW
Rf
RF
9695
Figure 8. Equivalent circuit of Pin RF
Filter (LPF)
The fully-integrated low-pass filter (4th order butter-
worth) removes the remaining carrier signal and
high-frequency disturbancies after demodulation. The
upper cut-off frequency of the LPF depends on the se-
lected oscillator frequency. The typ. value is fosc/18. That
means that data rates up to fosc/25 are possible if Bi-phase
or Manchester encoding is used.
A high-pass characteristic results from the capacitive
coupling at the input Pin 4, as shown in figure 9. The input
voltage swing is limited to 2 Vpp. For frequency response
Wcalculation, the impedances of the signal source and LPF
input (typ. 220 k ) have to be considered. The recom-
mended values of the input capacitor for selected data
rates are shown in the chapter “Applications”.
Note:
After switching on the carrier, the dc voltage of
the coupling capacitor changes rapidly. When
the antenna voltage is stable, the LPF needs
approximately 2 ms to recover full sensitivity.
VBias + 0.4 V
RS 10 kW
~~ CIN
210 kW
VBias – 0.4 V
VBias
12601
Figure 9. Equivalent circuit of Pin Input
Amplifier (AMP)
The differential amplifier has a fixed gain, typically 30.
The HIPASS pin is used for dc decoupling. The lower
cut–off frequency of the decoupling circuit can be
calculated as follows:
+ pfcut 2
1
CHP
Ri
WThe value of the internal resistor Ri can be assumed to be
2.5 k .
Recommended values of CHP for selected data rates can
be found in the chapter “Applications”.
R
R
+
–
LPF
VRef
Schmitt
trigger
R
Ri
R
HIPASS
CHP
12578
Figure 10. Equivalent circuit of pin HIPASS
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
5 (13)
5 Page 
U2270B
Electrical Characteristics
Test conditions (unless otherwise specified): VBatt = 12 V, Tamb = –40 to 105_C
Parameters
Test Conditions / Pins
Symbol Min. Typ. Max.
Unit
Data output
– collector emitter
saturation voltage
Iout = 5 mA
Pin 2
VCEsat
400 mV
Data output enable
Pin 3
– low level input voltage
– high level input voltage
Vil
Vih 2.4
0.5 V
V
Data input
Pin 4
– clamping level low
– clamping level high
– input resistance
– input sensitivity
f = 3 kHz (squarewave)
Vil 2
Vih 3.8
Rin 220
10
V
kVW
mV
gain capacitor = 100 nF
pp
Driver polarity mode
– low level input voltage
– high level input voltage
Carrier frequency enable
– low level input voltage
– high level input voltage
Operating current
Standby current
Pin 5
Pin 6
Pin10, 11, 12 and 14
5 V application without
load connected to the coil
driver
Pin 12
12 V application
Vil
Vih
Vil
Vih
IS
ISt
0.2 V
2.4 V
0.8 V
3.0 V
4.5 9 mA
30 70 mA
VS
– Supply voltage
– Supply voltage drift
– Output current
Driver output voltage
– One rail operation
– Battery voltage operation
Vext
– Output voltage
– Supply voltage drift
– Output current
– Standby output current
Standby input
– low level input voltage
– high level input voltage
Oscillator
– Carrier frequency
Low pass filter
– Cut off frequency
Amplifier
– Gain
Schmitt trigger
– Hysteresis voltage
Pin 14
IL = ±100 mA
VS, VEXT, VBatt, DVS = 5 V
VBatt = 12 V Pins 8 and 9
Pin 10
IC active
standby mode
Pin 13
WRF-resistor = 110 k
(application 2), REM 1.
VS
dVs/dT
IS
VDRV
VDRV
VEXT
dVEXT/dT
IEXT
IEXT
Vil
Vih
f0
Carrier freq. = 125 kHz
fcut
CHP = 100 nF
4.6
1.8
2.9
3.1
4.6
3.5
0.4
3.1
121
5.4
4.2
3.5
3.6
4.0
5.4
4.2
125
7
30
100
6.3 V
mV/K
mA
4.3 VPP
4.7 VPP
6.3 V
mV/K
mA
mA
0.8 V
V
129 kHz
kHz
mV
REM 1.: In application 1. where the oscillator operates in the free running mode, the IC must be soldered free from distortion. Otherwise,
the oscillator frequency may be out of bounds.
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
11 (13)
11 Page | ||
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