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What is TDE1898RSP?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH".


TDE1898RSP Datasheet PDF - ST Microelectronics

Part Number TDE1898RSP
Description 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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TDE1897R
TDE1898R
0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO VS - 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1897R/TDE1898R is a monolithic Intelli-
gent Power Switch in Multipower BCD Technol-
BLOCK DIAGRAM
PRELIMINARY DATA
MULTIPOWER BCD TECHNOLOGY
Minidip
SIP9
SO20
ORDERING NUMBERS:
TDE1897RDP
TDE1898RDP
TDE1898RSP
TDE1897RFP
TDE1898RFP
ogy, for driving inductive or resistive loads. An in-
ternal Clamping Diode enables the fast demag-
netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
October 1995
1/12
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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TDE1898RSP equivalent
TDE1897R - TDE1898R
APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
Tj = 85°C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W = Vcl
L
RL
Io
Vcl – Vs
RL
log
1
+
VclV–sVs

Where:
Vcl = clamp voltage;
L = inductive load;
RL = resistive load;
Vs = supply voltage;
IO = ILOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
Figure 3: Demagnetization Cycle Waveforms
Figure 2: Inductive Load Equivalent Circuit
Figure 4: Normalized RDSON vs. Junction
Temperature
D93IN018
α
1.8
1.6
α=
RDSON (Tj)
RDSON (Tj=25°C)
1.4
1.2
1.0
0.8
0.6
-25 0 25 50 75 100 125
Tj (°C)
5/12


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TDE1898RSP electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
TDE1898RSPThe function is 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH. ST MicroelectronicsST Microelectronics

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