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EIC discrete Semiconductors - SURFACE MOUNT HIGH VOLTAGE RECTIFIERS

Numéro de référence SN1P
Description SURFACE MOUNT HIGH VOLTAGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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SN1P fiche technique
SN1N - SN1R
PRV : 1200 - 2000 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
SURFACE MOUNT
HIGH VOLTAGE RECTIFIERS
SMA (DO-214AC)
1.1 ±
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.06 gram
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL SN1N SN1O SN1P SN1Q SN1R UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25°C
at Rated DC Blocking Voltage Ta = 100°C
Typical Junction Capacitance (Note 1)
Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
IF(AV)
1200
840
1200
1400
980
1400
1600
1120
1600
1.0
1800
1260
1800
2000
1400
2000
Volts
Volts
Volts
Amp.
IFSM
VF
IR
IR(H)
Cj
TJ
TSTG
30
2.2
5.0
100
36
- 40 to + 150
- 40 to + 150
Amps.
Volts
µA
µA
pF
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
UPDATE : AUGUST 1, 1998

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