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Mitsubishi Electric Semiconductor - Three-Phase Diode Bridge Modules

Numéro de référence RM10TN-H
Description Three-Phase Diode Bridge Modules
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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RM10TN-H fiche technique
RM10TN-H
A
D
G
H
E
B
F
R "Y"
~~~
TYP
KN
JL
P
+-
WM
S
R
Q
Z
φ"X"
UV
T
C
~ ~ ~+ -
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
2.83
1.18
0.35
2.55
0.59
0.54
2.32
2.21
0.48
0.40
1.60
0.05
Millimeters
71.8
30.0
9.0
64.8
15.0
13.7
58.8
56.2
12.08
10.16
40.64
1.20
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Z
Inches
0.16
0.02
0.55
0.20
0.35
0.14
0.45
0.71
0.06
0.16
0.16
0.08
Millimeters
4.0
0.6
14.0
5.0
9.0
3.5
11.5
18.0
1.5
4.0
4.0
2.0
Description:
Mitsubishi Three-Phase Diode
Bridge Modules are designed for
use in applications requiring rectifi-
cation of three-phase AC lines into
DC voltage. Each module consists
of six diodes and the interconnect
required to form a complete three-
phase bridge circuit. Each diode is
electrically insulated from the
mounting base plate for easy
mounting on a common heatsink
with other components.
Features:
ٗ Isolated Mounting
ٗ Metal Base Plate
ٗ Low Thermal Impedance
Applications:
ٗ Motor Control
ٗ Inverters
ٗ UPS
Ordering Information:
RM10TN-H
Sep.1998

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