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RN1006 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN1006
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1006 fiche technique
RN1001~RN1006
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003
RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2001~RN2006
Equivalent Circuit and Bias Resister Values
Type No.
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
R1 (k)
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1001~1006
RN1001~1004
RN1005, 1006
RN1001~1006
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
400
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
Unit
V
V
V
mA
mW
°C
°C
TO-92
SC-43
2-5F1B
1 2001-06-07

PagesPages 6
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